Study About Nanowires for the Bigginners By a Beginner

C Vanitha

Abstract


This paper aimed to produce detailed information regarding nanowires.  To create interest, awareness and involvement on one of the fastly growing, traditional & advanced technology.  Also deals necessary informations related to nanowires  with the reference of valid research papers.Nanowires are of interest to both the scientific and technical communities for greatly reduced device dimensions, radial epitaxial capping, and axial growth of lattice mismatched structures. The main challenges for nanowire growth can be divided into four areas: control of growth, heterostructures, doping, and integration with Si. Once nanowires have been grown they must be connected to the outside world to eventually become part of an electronic circuit. However, the high aspect ratio of these objects requires the development of  nanowire-specific processing techniques. To integrate nanowires into electronic components reliably, a thorough understanding of their relevant physical properties is required. The well-established physics of three-dimensional, two-dimensional, and more recently zero-dimensional semiconductor materials must be revised for the specific one-dimensional nanowire properties, such as surface and interface relaxation, carrier confinement (electrons and holes), and the strong dielectric index change at the nanowire-environment interface. Crucial parameters for the electrical performance of nanowire devices are the carrier concentration (defined by the doping level), carrier mobility, and bandgap. Electronic devices form the basic constituents of modern integrated circuits. They come in many varieties and are used to amplify and rectify electronic signals, perform logic operations, or store charge in digital memories. Next to these purely electronic functions, other devices interact with light, heat flow, or even biological fluids. From an implementation point of view, that nanowires will replace CMOS technology. We can expect that nanowire technology will gradually find its place by adding functionality, offering process advantages, and delivering superior performance in selected areas.

Keywords


Doping, Dimension, Band gap, Synthesis, Properties.

References


CNR Rao* and A.Govindaraj,Nanotubes and Nanowires, Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012,India

Jiagtao Hi, Teri Wang Odom and Charles M. Lieber*Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes, Department of Chemistry and Chemical Biology and Division of Engineering and Applied Sciences,Harward University,Cambridge,Massachusetts 02138,Received September 24,1998.

Richard Booker and Earl Boysen, Nanotechnology, 2005 by Wiley Publishing Inc. USA.

B.Viswanathan, Nano Materials, 2009,Narosa Publishing House Pvt. Ltd, NewDelhi.


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