Study of Silicon Nanoelectronics Materials

L Thilagavathi, G Senthil Kumar

Abstract


Nanoelectronics materials are fabricate by the silicon/gallium and arsenic, etc. In this paper view the study of silicon nanoelectronics materials.

 

Now –a- days the semiconductor device size enters the below 50 nanometer range, because of quantum effect and single electron effect, mainly the both effects using to fabricate the ultra-small devices.

 

Quantum effects in silicon nanodevices like silicon metal oxide semiconductor field effect transistors in very large scale integrated circuits in CMOS technology, quantum dot nanotubes because of the large energy separations formed inside the quantum dots with contribute from the quantum confinement and the coulomb effect.

 

In nanotechnology enable to fabricate very small structures for example single electron devices like transistor and memory devices. Very small devices can be access with good efficiency and low power consumptions.

 

The new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.


Keywords


Quantum effect, Single electron effect.

References


Karoru Ohno, Masatoshi Tanaka, Jun Takeda, Yoshiyuki Kawazoe: Nano-And Micromaterials, published by Springer (India) pvt. Ltd, New Delhi-110 002

Shunri Oda. David ferry: Silicon Nanoelectronics, published in 2006 by CRC press.

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Varun Mittal: basic introduction to single electron transistor, International Journal for Research in Applied Science & Engineering Technology (IJRASET).

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Zhi Chen: Nanotubes for Nanoelectronics

University of Kentucky, Lexington, Kentucky, USA, journal publication.

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