Theoretical Investigations on the Properties of Quantum Nanostructures dependent on Density of States

A Anitha, M Arulmozhi

Abstract


In solid-state and condensed matter physics, the density of states (DOS) of a system describes the number of states per interval of energy at each energy level that are available to be occupied by electrons.  DOS D(EF) of conduction electrons are affected by the dimensionality of a material which influences some properties of the material.  At low temperatures, there is a contribution to the specific heat of a conductor ‘Cel’ arising from the conduction electrons, and it depends on the electronic DOS at Fermi level as Cel=(π2D(EF)kB2T)/3.  Susceptibility of a magnetic material arising from the conduction electrons is given by χelB2D(EF). The carrier concentration in a semiconductor also depends on the DOS of electrons and holes respectively. The energy gap of a superconductor also depends on the D(E). Thus properties of almost all kinds of quantum nanostructured materials are affected by the DOS D(EF). The above properties are theoretically studied and discussed in this paper. The studies show new results which calls for further research and are in close agreement with the available experimental data.

Keywords


Quantum well, quantum wire, Bulk material, density of states, specific heat, carrier concentration, paramagnetic susceptibility, energy gap.

References


Charles P. Poole, Jr., Frank J. Owens, Introduction to Nanotechnology, John Wiley & Sons, NewDelhi, 2006.

Charles Kittel, Introduction to Solid State Physics, Seventh Edition, John Wiley & Sons, NewDelhi, 2007.

Information on http://ecee.colorado.edu/~bart/ book/chapter2/pdf/ch2_3_7.pdf

Safa Kasap, Thermoelectric effects in metals, Special Custom published e-booklet (2001)

Pallab Bhattacharya, Roberto Fornari, Hiroshi Kamimura, Comprehensive Semiconductor Science and Technology, Elsevier publications, (2011) pp.336-340.

B. Boyacioglu, A. Chatterjee, Heat capacity and Entropy of GaAs quantum dot with gaussian confinement, J. Appl Phys., 8 (2012) pp. 112.


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