Investigation on Low Temperature high pressure oxidation of Porous Silicon

V Ragavendran, P Jayabal, J Mayandi

Abstract


We report on the preparation of porous silicon layers from p -type silicon by electrochemical etching method for various etching time. The prepared PS layers were oxidized using the low temperature high pressure setup. The optical and the structural properties of the samples were studied by micro Raman and Diffuse reflectance spectroscopy (DRS). DRS measurements were carried out at room temperature for all the samples and noticed variations in the reflectance, etched for constant current with respect to time. The red shift has been observed from the Raman spectra and it indicates formation of nano pores in the etched porous layer.


Keywords


Porous silicon, electrochemical etching, Raman spectra, solar cells.

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