Influence Of Annealing And Sio2 Layer On Structural, Optical And Electrical Properties Of Hydrophobic Ito Thin Films Prepared By Activated Reactive Evaporation

M Vishwas, K Narasimha Rao, K.S Kareem, R.P.S Chakradhar

Abstract


Tin doped indium oxide In2O3-Sn (ITO) thin films have been deposited on glass substrates by activated reactive evaporation method. The films were annealed in ambient air at different temperatures. The optical properties of the films were studied by UV-Vis spectrophotometer. The dependence of optical transmittance and reflectance with annealing temperature was investigated. A layer of SiO2 film was deposited on ITO film by rf sputtering method.

The effect of SiO2 layer on ITO film for variation of these optical properties was studied. The sheet resistance was measured by four probe method after annealing at different temperatures and found to be increased with annealing temperature.

The films exhibited crystalline phase after annealing at 300oC and higher temperatures. The contact angle of ITO and ITO-SiO2 films were measured at RT and annealed at 300oC. ITO-SiO2 film transferred from hydrophobic to hydrophilic nature after annealing in an air ambient.

Keywords


ITO Activated reactive evaporation, XRD, AFM, Contact angle.

References


] H. Yumoto, T. Inoue, S.J. Li, T. Sako, K. Nishiyama,

Thin Solid Films 345 (1999) p 38.

A.K. Kulkarni, K.H. Schulz, T.S. Lim, M. Khan,

Thin Solid Films 308–309 (1997) p 1.

S. Ishibashi, Y. Higushi, Y. Ota, K. Nakamuva,

J.Vac. Sci. Technol.B 18 (1990) p 1399.

K.L. Chopra, S. Major, D.K. Pandya, Thin Solid

Films 102 (1983) p 1.

C.V.R. Vasant Kumar, A.A. Mansingh, J. Appl.

Phys. 65 (1989) p 1270.

H.M. Ali, H.A. Mohamed, S.H. Mohamed, J. Appl.

Phys. 31 (2005) p 87.

H. Kim, J.S. Howitz, G. Kushto, A. Pique, Z.H.

Kafafi, C.M. Gilmore, D.B. Chrisey, J.

Appl. Phys. 88 (2000) p 6021.

A. Simashkevich, D. Serban, L. Bruc, A. Coval, V. Federov, E. Bobeico, Iu. Usatii, Moldavian J. Phys. Sci. 3 (2004) p 334.

H. Chen, C. Qiu, M. Wong, H. S. Kwok, IEEE

Electron Device Lett. 24 (2003) p 315.

L. Kerkache, A. Layadi, E. Dogheche, D. Remiens,

J. Appl. Phys. 39 (2006) p 184.

V. Craciun, D. Craciun, X. Wang, T. J. Anderson, R.

K. Singh, J. Optoelectronics and Advanced

Materials 5 (2) (2003) p 401

.

Y.J. Jo, C.H. Hong, J.S. Kwak, Current Applied

Physics 11 (2011) p S143.

N. Wan, T. Wang, H. Sun, G. Chen, L. Geng, X.

Gan, S. Guo, J. Xu, L. Xu, K. Chen, J. Non-

Crystalline Solids 356 (2010) p 911

.

C. Viespe, I. Nicolae, C. Sima, C. Grigoriu, R.

Medianu, Thin Solid Films 515 (2007) p 8771.

R. Swanepoel, J. Phys. E: Sci.Instrum.16 (1983)

p 1214

.

A.El Hichou, A.Kachouane, J.L.Bubendorff,

M.Addou, J.Ebothe, M.Troyon, A.Bougrine, Thin Solid Films 458 (2004) p 263.

S Patra, S Sarkar, S K Bera, R Ghosh, G K Paul, J.

Phys. D: Appl. Phys. 42 (2009) p 075301.

J. Lü, K. Huang, X. Chen, J. Zhu, F. Meng, X. Song,

Z. Sun, Appl. Sur. Sci. 256 (2010) p 4720.

S. Patra, S. Sarkar, S. K. Bera, G. K. Paul, R.

Ghosh, J. Appl. Phys. 108 (2010) p 083507.

.


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