Photoconductive Properties of Brush plated Copper Indium Selenide(CIS) films

N.P Subiramaniyam, A Balamurugan, P Thirunavukkarasu

Abstract


CuInSe2(CIS) films were deposited by the brush plating technique for the first time. Analar grade copper sulphate (0.03M), indium sulphate (0.05 M) and 0.005 M selenium oxide was used for the deposition of films. The films were deposited at different bath temperatures XRD analysis of the films indicated CIS peaks corresponding to the chalcopyrite crystal structure. The chemical composition of the films identified using the EDAX was found to be copper rich. Tauc’s plot indicated a direct band gap.  Surface morphology of the films indicated an increase of grain size and RMS value of surface roughness from 0.32 nm to 1.3 nm with deposition current density. Resistivity of the films increased with increase of bath temperature from 0.1 ohm cm to 20 ohm cm. Solar cells fabricated with brush plated CuInS2 films yielded respectable photo output.


Keywords


semiconductors, I-III-VI2, solar cells, brush plating.

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