Investigation of the Effect of Dopants on Growth Mechanism of ZnS Thin films

C Gunasekaran, V Senthil Kumar

Abstract


In this  paper, the effect of dopants  fluorine and  nickel on  the growth mechanism  of  ZnS thin films  prepared  by  spray pyrolysis, containing  zinc  chloride, thiourea,  ammonium fluoride and nickel   nitrate  aqueous solutions has been studied in the temperature 4500 C.  Characterization techniques such as XRD, SEM with EDAX, UV-VIS spectrophotometer and thickness measurements  utilized  to investigate  the  effect of doping of fluorine and nickel.  These  ZnS  thin films possess a nano crystalline structure, have  good adherence  to the  glass  substrates  and  exhibit cubic phase with a preferential orientation along the (111) direction.  Images  from a scanning electron microscope revealed a drastic change of the surface morphology of the Ni-doped ZnS thin films  due to ion-by-ion deposition. The energy  band gaps of Ni-doped  ZnS  thin films shifted to lower energy level.  the electro-optical  properties  of  these  films  improved  by  fluorine-doping. The fluorine doping made the orientation along  the (002) direction and does not  vary the lattice parameters. Therefore,  F introduction  in lattice by the substitution of S-2 ions  by  F1 ions.  Therefore, we suggest  that ionized  impurity and/or  neutral impurity effect  are  the  dominant in growth  mechanisms of  these films.

Keywords


Zinc sulfide, Spray pyrolysis, semiconductor photo catalysis, photo electrodes.

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